zirconium hafnium precursors

zirconium hafnium precursors

Novel Thermally-Stable Hafnium and Zirconium ALD Precursors

Novel Thermally-Stable Hafnium and Zirconium ALD Precursors Abstract: Atomic Layer Deposition (ALD) of Hf and Zr oxide films is of considerable interest and promise for future generation Metal-lnsulator-Metal (MIM) structures in memory applications.

WO2018122612A1 - Zirconium, hafnium, titanium precursors ...

Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same Download PDF Info Publication number WO2018122612A1. WO2018122612A1 PCT/IB2017/001739 IB2017001739W WO2018122612A1 WO 2018122612 A1 WO2018122612 A1 WO 2018122612A1 IB 2017001739 W IB2017001739 W IB 2017001739W WO 2018122612 A1 WO2018122612 A1 WO ...

US20100112211A1 - Zirconium, hafnium, titanium, and ...

Zirconium, hafnium, titanium and silicon precursors useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of corresponding zirconium-containing, hafnium-containing, titanium-containing and silicon-containing films, respectively. The disclosed precursors achieve highly conformal deposited films characterized by minimal carbon incorporation.

Atomic Layer Deposition of Hafnium and Zirconium Oxides ...

zirconium oxides was studied using six metal alkylamide precursors for hafnium and zirconium. Water was used as an oxygen source during these experiments. As deposited, these films exhibited a smooth surface with a measured roughness equivalent to that of the

US20120196449A1 - Zirconium, hafnium and titanium ...

Zirconium, hafnium and titanium precursors for atomic layer deposition of corresponding metal-containing films Download PDF Info Publication number US20120196449A1.

US10364259B2 - Zirconium, hafnium, titanium precursors and ...

Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L 2 -M-C 5 R 4 -[(ER 2 ) 2 —NR]—, wherein M is Ti, Zr, or Hf bonded in an η 5 bonding mode to the Cp group; each E is independently C, Si, B or P; each R is independently a hydrogen or ...

US10364259B2 - Zirconium, hafnium, titanium precursors and ...

Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L 2 -M-C 5 R 4 -[(ER 2 ) 2 —NR]—, wherein M is Ti, Zr, or Hf bonded in an η 5 bonding mode to the Cp group; each E is independently C, Si, B or P; each R is independently a hydrogen or ...

CN101310037B - Cyclopentadienyl type hafnium and zirconium ...

Precursors suitable for chemical vapour deposition, especially ALD, of hafnium oxide or zirconium oxide, have the general formula (I): (R1Cp)2MR2 R3 wherein Cp represents a cyclopentadienyl ligand, R1 is H or a substituting alkyl group, alkoxy group or amido group of the Cp ligand, R2 and R3 is an alkyl group, an alkoxy group or an amido group and M is hafnium or zirconium.

Precursors for zirconium and hafnium oxide thin film ...

A method of making a precursor for a thin film formed by chemical vapor deposition processes, includes mixing ZCl 4 with H(tmhd) 3 solvent and benzene to form a solution, where Z is an element taken from the group of elements consisting of hafnium and zirconium; refluxing the solution for twelve hours in an argon atmosphere; removing the solvents via vacuum, thereby producing a solid compound ...

Hafnium CVD Precursors – TRINITRI-Technology LLC

Mar 21, 2018 · Halide precursors (HVPE) Hafnium Tetrachloride HfCl4 Melting point 432°C (vapor pressure 44.4 atm) Sublimation temperature 315°C (1 atm) Condensed phase density 3.86 g/cm3 (at 25°C) Molar mass 320.3 g/mol References Tangri, R. P., and D. K. Bose. "Vapour pressure measurement of zirconium chloride and hafnium chloride by the transpiration technique."

Atomic Layer Deposition of Insulating Hafnium and ...

The mononitrides of hafnium and zirconium of stoi-chiometry MN (M ) Hf, Zr) are all metallic conductors.1 On the other hand, the higher nitrides of hafnium and zirconium, M 3N 4, are reported to be transparent insula-tors or semiconductors.2-11 In general, the properties of group IV nitrides are well-understood for nitrogen-

Metal Alkoxide Precursors in CVD and ALD Processes

Applications of Metal Alkoxide Precursors. Metal alkoxides of copper, tantalum, vanadium, zirconium, titanium, hafnium, and aluminum have been explored as precursors to form oxide thin films using CVD/ALD. Using proper precursors, the CVD/ALD process is

The molecular composition of non-modified and acac ...

May 19, 2009 · The alkoxides of zirconium and more recently, hafnium became widely used as precursors in preparation of oxide materials for various applications, ranging from porous membranes [1–3] and matrices in catalysis [4, 5] to dense dielectric and ferroelectric films in electronics [6, 7].Despite the broad application of these alkoxide complexes, their molecular nature is not understood so far.

Deposition of ZrO2 and HfO2 thin films by liquid injection ...

Thin films of ZrO 2 and HfO 2 have been deposited by liquid injection metalorganic chemical vapour deposition (MOCVD) and atomic layer deposition (ALD) using a range of ansa-metallocene precursors [(Cp 2 CMe 2)ZrMe 2] (1), [(Cp 2 CMe 2)ZrMe(OMe)] (2) [(Cp 2 CMe 2)HfMe 2] (3), and [(Cp 2 CMe 2)HfMe(OMe)] (4) with O 2 (MOCVD) or ozone (ALD) as oxygen source. The crystal structures of the

Tetrakis(dimethylamido)hafnium(IV) packaged for use in ...

Alkyl amides of Hafnium provide a convenient and effective atomic layer deposition precursor to smooth and and amorphous hafnium oxide thin films. Application Used as precursor for atomic layer deposition of Hafnium Oxide nanolaminates, which are used as a

Thermal stability studies for advanced Hafnium and ...

Sep 25, 2007 · Precursors. Stability. TGA. NMR. 1. Introduction. In the search for high permittivity layers to replace SiO 2 as the gate dielectric material in 45 nm complementary metal oxide semiconductor technology (CMOS) thin films of Zirconium dioxide (ZrO 2) and Hafnium dioxide (HfO 2) have been identified as promising candidates [1], [2].

Chemistry of 2,2,6,6,-Tetramethyl-3,5-heptanedione (Hthd ...

The modification of different zirconium propoxide and hafnium propoxide precursors with 2,2,6,6,-tetramethyl-3,5-heptanedione (Hthd) was investigated by characterization of the isolated modified species. The complexes [Zr(OnPr)3(thd)]2, [Zr(OnPr)(OiPr)2(thd)]2, Zr(OiPr)(thd)3, [Hf(OnPr)3(thd)]2, and Hf(OiPr)(thd)3 were isolated and characterized. The structure of the n-propoxide analogue of Zr ...

Magic Leap Patent | Optical elements based on polymeric ...

Sep 23, 2021 · For example, for incorporating a transition metal oxide including aluminum oxide, zinc oxide, zirconium oxide, hafnium oxide, titanium oxide, tantalum oxide and combinations thereof, the metal precursor used for the first stage can include halides (i.e., metal bonded to F, Cl, Br or I), alkyl compounds and alkoxides having the transition metal.

Materials | Free Full-Text | Investigations of Structural ...

The continuous development of ALD thin films demands ongoing improvements and changes toward fabricating materials with tailored properties that are suitable for different practical applications. Ozone has been recently established as a precursor, with distinct advantages over the alternative oxidizing precursors in the ALDs of advanced dielectric films. This study reports alumina (Al2O3) and ...

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Solid-state zirconium NMR references. Bryan E.G. Lucier and Yining Huang A review of 91 Zr solid-state nuclear magnetic resonance spectroscopy, Annu. Rep. Nucl. Magn. Reson. Spectrosc.卷边1v7在线观看 卷边1v7高清完整在线观看,在床上男脱女人的内衣 高清在线观看 精彩完整视频 84, 233-289

Cyclopentadienyl type hafnium and zirconium precursors and ...

Nov 16, 2005 · Precursors suitable for chemical vapour deposition, especially ALD, of hafnium oxide or zirconium oxide, have the general formula (I): (R1Cp)2MR2 R3 wherein Cp represents a cyclopentadienyl ligand, R1 is H or a substituting alkyl group, alkoxy group or amido group of the Cp ligand, R2 and R3 is an alkyl group, an alkoxy group or an amido group ...

Hafnium Nitrate Precursor Synthesis and HfO Thin Film ...

hafnium and zirconium nitrate precursors. The intermediate product, dinitrogen pentoxide produced from the water extraction from fume nitric acid via phosphorus pentoxide, was condensed by liquid nitrogen trap into a flask equipped with hafnium or zirconium tetrachloride. To give the high

A comparasion of Hafnium and Zirconium ALD precursor ...

Jan 11, 2020 · A comparasion of Hafnium and Zirconium ALD precursor comparison Here is a very nice review paper from Uwe Schröder and co-workers at NaMLab in Dresden on comparing Hafnium and Zirconium ALD precursors published in the past decades and the selection for mixed HfO2 and ZrO2 ALD high-k and ferroelectric applications.

Comparison of hafnium dioxide and zirconium dioxide

films as the gate oxide. Tetrakis (dimethylamino) hafnium (Hf[N(CH 3) 2] 4) and Tetrakis (dimethylamino) zirconium (IV) (Zr[N(CH 3) 2] 4) were used as the precursors, while O 2 gas was used as the reactive gas. The PE-ALD-grown HfO 2 and ZrO 2 thin films were analyzed using X-ray photoelectron spectroscopy (XPS),

Hafnium and zirconium tetramethylnonanedionates as new ...

Feb 01, 2005 · M(tmnd) 4 precursors (M=Zr and Hf) lead to significantly higher film growth rates at low temperatures and give smoother films on sapphire compared to conventional zirconium and hafnium 2,2,6,6-tetramethyl-3,5-heptanedionates, showing that they are attractive MOCVD precursors

Chemical vapour deposition of the oxides of titanium ...

A brief survey of the precursors used for the chemical vapour deposition of the dioxides of titanium, zirconium and hafnium is presented. The review covers precursors used for the closely related process known as atomic layer chemical vapour deposition (ALCVD or ALD).

Hafnium Nitrate Precursor Synthesis and HfO 2 Thin Film ...

Oct 18, 2010 · The paper will introduce a simple new method for the synthesis of both hafnium and zirconium nitrate precursors. The intermediate product, dinitrogen pentoxide produced from the extraction of water...

Chemistry of 2,2,6,6,-Tetramethyl-3,5-heptanedione (Hthd ...

The modification of different zirconium propoxide and hafnium propoxide precursors with 2,2,6,6,-tetramethyl-3,5-heptanedione (Hthd) was investigated by characterization of the isolated modified species. The complexes [Zr(OnPr)3(thd)]2, [Zr(OnPr)(OiPr)2(thd)]2, Zr(OiPr)(thd)3, [Hf(OnPr)3(thd)]2, and Hf(OiPr)(thd)3 were isolated and characterized. The structure of the n-propoxide analogue of Zr ...

Unbridged 1- and 2-substituted bis(silylindenyl) zirconium ...

Nov 24, 2017 · Two equivalents of the indenyl ligand precursors 5–8 were deprotonated with two equivalents of n-butyllithium (n-BuLi) in diethyl ether. Subsequent metallation reactions with one equivalent of zirconium tetrachloride or hafnium tetrachloride in diethyl ether yielded the desired metallocene complexes 13–18.

(PDF) Carbothermal reduction synthesis of nanocrystalline ...

ULTRA-HIGH TEMPERATURE CERAMICS J O U R N A L O F M A T E R I A L S S C I E N C E 3 9 (2 0 0 4 ) 6057 – 6066 Carbothermal reduction synthesis of nanocrystalline zirconium carbide and hafnium carbide powders using solution-derived precursors MICHAEL D. SACKS, CHANG-AN WANG ∗ , ZHAOHUI YANG, ANUBHAV JAIN School of Materials Science and Engineering, Georgia Institute of

Thermal stability studies for advanced Hafnium and ...

Atomic layer deposition (ALD) of smooth and highly conformal films of hafnium and zirconium oxides was studied using six metal alkylamide precursors for hafnium and zirconium. Water was used as an ...

Atomic Layer Deposition of Hafnium and Zirconium Oxides ...

Atomic layer deposition (ALD) of smooth and highly conformal films of hafnium and zirconium oxides was studied using six metal alkylamide precursors for hafnium and zirconium. Water was used as an ...

(PDF) The molecular composition of non-modified and acac ...

The hydroxyl group of the alcohol molecule The molecular composition of the zirconium and hafnium attached to Zr(4), identified by O(13), is involved into alkoxide precursors has been an object of intensive studies hydrogen bonding to the tridentate oxo-ligand in the tri- since the beginning of 1990s.